FDB28N30TM, Транзистор: N-MOSFET, полевой, 300В, 28А, 250Вт, D2PAK
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2 250 ֏
от 5 шт. —
1 850 ֏
от 25 шт. —
1 460 ֏
от 100 шт. —
1 260 ֏
1 шт.
на сумму 2 250 ֏
Описание
Semiconductors\Transistors\Unipolar transistors\N channel transistors
Описание Транзистор: N-MOSFET, полевой, 300В, 28А, 250Вт, D2PAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Case | D2PAK |
| Drain current | 28A |
| Drain-source voltage | 300V |
| Gate charge | 50nC |
| Gate-source voltage | ±30V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 0.129Ω |
| Polarisation | unipolar |
| Power dissipation | 250W |
| Technology | UniFET™ |
| Type of transistor | N-MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Resistance | 129 mΩ |
| Maximum Drain Source Voltage | 300 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 250 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Series | UniFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V |
| Width | 11.33mm |
| Вес, г | 1.312 |