FDD5353, Транзистор: N-MOSFET, полевой, 60В, 50А, 69Вт, DPAK
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Описание
Semiconductors\Transistors\Unipolar transistors\N channel transistors
Описание Транзистор: N-MOSFET, полевой, 60В, 50А, 69Вт, DPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Case | DPAK |
| Drain current | 50A |
| Drain-source voltage | 60V |
| Gate charge | 65nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 20.3mΩ |
| Polarisation | unipolar |
| Power dissipation | 69W |
| Technology | PowerTrench® |
| Type of transistor | N-MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 4 ns |
| Id - Continuous Drain Current: | 11.5 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 3.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 65 nC |
| Rds On - Drain-Source Resistance: | 12.3 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 6 ns |
| Series: | FDD5353 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 36 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 454 КБ
Datasheet FDD5353
pdf, 469 КБ