FDS9958, Транзистор P-MOSFET x2, полевой, -60В, -2,9А, 2Вт, SO8

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1 320 ֏

от 5 шт. — 930 ֏

от 25 шт. — 720 ֏

от 100 шт. — 580 ֏

1 шт. на сумму 1 320 ֏

Номенклатурный номер: 8002668279

Fairchild PowerTrench MOSFETs

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Dual Dual Drain
Factory Pack Quantity	2500
Fall Time	6 ns
Height	1.75 mm
Id - Continuous Drain Current	-2.9 A
Length	4.9 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SO-8
Packaging	Reel
Pd - Power Dissipation	2 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	105 mOhms
Rise Time	3 ns
RoHS	Details
Series	FDS9958
Technology	Si
Tradename	PowerTrench
Transistor Polarity	P-Channel
Transistor Type	2 P-Channel
Typical Turn-Off Delay Time	27 ns
Typical Turn-On Delay Time	6 ns
Unit Weight	0.006596 oz
Vds - Drain-Source Breakdown Voltage	-60 V
Vgs - Gate-Source Voltage	20 V
Width	3.9 mm
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity:	2500
Fall Time:	6 ns
Id - Continuous Drain Current:	2.9 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	SOIC-8
Pd - Power Dissipation:	2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	23 nC
Rds On - Drain-Source Resistance:	105 mOhms
Rise Time:	3 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	2 P-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	6 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.11

pdf, 334 КБ

pdf, 336 КБ