SI2307
530 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
273 ֏
от 10 шт. —
194 ֏
от 100 шт. —
123 ֏
2 шт.
на сумму 1 060 ֏
Описание
Электроэлемент
Транзистор: P-MOSFET; Trench; полевой; -30В; -2,7А; Idm: -12А; 1,1Вт
Технические параметры
| Brand | Micro Commercial Components(MCC) |
| Channel Mode | Enhancement |
| Configuration | 1 P-Channel |
| Factory Pack Quantity | 3000 |
| Fall Time | 17 ns |
| Forward Transconductance - Min | 7 S |
| Id - Continuous Drain Current | -2.7 A |
| Manufacturer | Micro Commercial Components(MCC) |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 1.1 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 6.2 nC |
| Rds On - Drain-Source Resistance | 73 mOhms |
| Rise Time | 40 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 40 ns |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | -3 V |
| Вес, г | 0.04 |
Техническая документация
Datasheet SI2307-TP
pdf, 936 КБ