2SK3703-1E
2 780 ֏
от 2 шт. —
2 290 ֏
от 5 шт. —
1 940 ֏
1 шт.
на сумму 2 780 ֏
Описание
Электроэлемент
MOSFET, N-CH, 60V, 30A, TO-220F-3SG; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:25W; Transistor Case Style:TO-220F; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 144 ns |
| Forward Transconductance - Min | 13 S |
| Id - Continuous Drain Current | 30 A |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 25 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 40 nC |
| Rds On - Drain-Source Resistance | 20 mOhms |
| Rise Time | 110 ns |
| RoHS | Details |
| Series | 2SK3703 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 166 ns |
| Typical Turn-On Delay Time | 16.5 ns |
| Unit Weight | 0.211644 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Вес, г | 2.522 |