EMX1DXV6G
530 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
264 ֏
от 10 шт. —
190 ֏
от 100 шт. —
116 ֏
2 шт.
на сумму 1 060 ֏
Описание
Электроэлемент
Trans GP BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: EMX1DXV6T1G)
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 60 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Configuration | Dual |
| Continuous Collector Current | 0.1 A |
| DC Collector/Base Gain hfe Min | 120 |
| Emitter- Base Voltage VEBO | 7 V |
| Factory Pack Quantity | 4000 |
| Gain Bandwidth Product fT | 180 MHz |
| Height | 0.55 mm |
| Length | 1.6 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-563-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 357 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | EMX1 |
| Transistor Polarity | NPN |
| Unit Weight | 0.000289 oz |
| Width | 1.2 mm |
| Вес, г | 0.11 |
Техническая документация
Datasheet EMX1DXV6T1G
pdf, 59 КБ