NTD4808NG
1 100 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
840 ֏
от 10 шт. —
700 ֏
от 100 шт. —
600 ֏
2 шт.
на сумму 2 200 ֏
Описание
Электроэлемент
9.8A, 30V, 0.0124ohm, N-Channel Power MOSFET
Технические параметры
| Configuration | Single |
| Continuous Drain Current | 12 A |
| Drain-Source Breakdown Voltage | 30 V |
| Forward Transconductance gFS (Max / Min) | 11.4 S |
| Gate-Source Breakdown Voltage | 20 V |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Package / Case | DPAK |
| Packaging | Reel |
| Power Dissipation | 2000 mW |
| Product | General Purpose MOSFETs |
| Product Category | MOSFETs |
| Resistance Drain-Source RDS (on) | 0.008 Ohm @ 10 V |
| Transistor Polarity | N-Channel |
| Type | FETs-MOSFETs |
| Typical Fall Time | 5.6 ns |
| Typical Rise Time | 102 ns |
| Typical Turn-Off Delay Time | 11 ns |
| Вес, г | 0.46 |