NTHS4101PG
1 630 ֏
от 2 шт. —
1 240 ֏
от 5 шт. —
980 ֏
от 10 шт. —
880 ֏
1 шт.
на сумму 1 630 ֏
Описание
Электроэлемент
MOSFET, P CH, -20V, -4.8A, CHIPFET-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 4.8(A) |
| Drain Current (Max) | 4.8 A |
| Drain Efficiency | Not Required% |
| Drain-Source On-Res | 0.034(ohm) |
| Drain-Source On-Volt | 20(V) |
| Frequency (Max) | Not Required MHz |
| Gate-Source Voltage (Max) | ±8(V) |
| Mounting | Surface Mount |
| Noise Figure | Not Required dB |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Output Power (Max) | Not Required W |
| Package Type | ChipFET |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Polarity | P |
| Power Dissipation | 2.5(W) |
| Power Gain | Not Required dB |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 0.0239 |
Техническая документация
Документация
pdf, 196 КБ