NTR4171PG
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
580 ֏
Мин. кол-во для заказа 2 шт.
от 10 шт. —
392 ֏
от 100 шт. —
335 ֏
2 шт.
на сумму 1 160 ֏
Описание
Электроэлемент
MOSFET, P CH, -30V, -3.5A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.15V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
Brand | ON Semiconductor |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 22 ns |
Forward Transconductance - Min | 7 S |
Height | 0.94 mm |
Id - Continuous Drain Current | -3.5 A |
Length | 2.9 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Packaging | Reel |
Pd - Power Dissipation | 1.25 W |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 90 mOhms |
Rise Time | 16 ns |
RoHS | Details |
Series | NTR4171P |
Technology | Si |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Type | Power MOSFET |
Typical Turn-Off Delay Time | 32 ns |
Typical Turn-On Delay Time | 9 ns |
Unit Weight | 0.050717 oz |
Vds - Drain-Source Breakdown Voltage | -30 V |
Vgs - Gate-Source Voltage | 12 V |
Width | 1.3 mm |
Вес, г | 0.03 |
Техническая документация
Документация
pdf, 121 КБ