MMBF170LG
484 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
251 ֏
от 10 шт. —
176 ֏
от 100 шт. —
104 ֏
2 шт.
на сумму 968 ֏
Описание
Электроэлемент
MOSFET, N, 60V, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipatio
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Forward Transconductance - Min | 0.45 S |
| Height | 0.94 mm |
| Id - Continuous Drain Current | 500 mA |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 225 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 5 Ohms |
| RoHS | Details |
| Series | MMBF170L |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 10 ns |
| Unit Weight | 0.050717 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.3 mm |
| Вес, г | 0.0313 |
Техническая документация
Документация
pdf, 114 КБ