MMBT4403LG
401 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
172 ֏
от 10 шт. —
93 ֏
от 100 шт. —
26 ֏
2 шт.
на сумму 802 ֏
Описание
Электроэлемент
TRANSISTOR, BIPOL, PNP, -40V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:-600mA; DC Current Gain hFE:20hFE; Transist
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | -40 V |
| Collector- Emitter Voltage VCEO Max | -40 V |
| Collector-Emitter Saturation Voltage | -0.75 V |
| Configuration | Single |
| Continuous Collector Current | -0.6 A |
| DC Collector/Base Gain hfe Min | 30 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 200 MHz |
| Height | 0.94 mm |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 225 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MMBT4403L |
| Transistor Polarity | PNP |
| Unit Weight | 0.050717 oz |
| Width | 1.3 mm |
| Вес, г | 0.03 |
Техническая документация
Datasheet
pdf, 162 КБ