MMBT5551LG
379 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
154 ֏
от 10 шт. —
80 ֏
от 100 шт. —
30 ֏
2 шт.
на сумму 758 ֏
Описание
Электроэлемент
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:50mA; Hfe Min:80; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 140 V |
| Collector- Emitter Voltage VCEO Max | 160 V |
| Collector-Emitter Saturation Voltage | 0.15 V |
| Configuration | Single |
| Continuous Collector Current | 0.6 A |
| DC Collector/Base Gain hfe Min | 80 |
| DC Current Gain hFE Max | 250 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 3000 |
| Height | 0.94 mm |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 225 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MMBT5551L |
| Transistor Polarity | NPN |
| Unit Weight | 0.050717 oz |
| Width | 1.3 mm |
| Вес, г | 0.035 |
Техническая документация
Datasheet
pdf, 177 КБ