NTR5103NG
423 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
185 ֏
от 10 шт. —
110 ֏
от 100 шт. —
42 ֏
2 шт.
на сумму 846 ֏
Описание
Электроэлемент
MOSFET, N-CH, 60V, 0.26A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:260mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Powe
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 3000 |
| Fall Time | 3.6 ns |
| Forward Transconductance - Min | 530 mS |
| Id - Continuous Drain Current | 310 mA |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 420 mW |
| Product Category | MOSFET |
| Qg - Gate Charge | 810 pC |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Rise Time | 1.2 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 4.8 ns |
| Typical Turn-On Delay Time | 1.7 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 1.9 V |
| Вес, г | 0.03 |
Техническая документация
Datasheet NTR5103NT1G
pdf, 128 КБ