MMBTA56WG
401 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
172 ֏
от 10 шт. —
93 ֏
от 100 шт. —
24 ֏
2 шт.
на сумму 802 ֏
Описание
Электроэлемент
TRANSISTOR, BIPOL, PNP, -80V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power Dissipation Pd:150mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transist
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | -80 V |
| Collector- Emitter Voltage VCEO Max | -80 V |
| Collector-Emitter Saturation Voltage | -0.25 V |
| Configuration | Single |
| Continuous Collector Current | -0.5 A |
| Emitter- Base Voltage VEBO | 4 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 50 MHz |
| Height | 0.85 mm |
| Length | 2.1 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 150 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MMBTA56W |
| Transistor Polarity | PNP |
| Unit Weight | 0.000219 oz |
| Width | 1.24 mm |
| Вес, г | 0.03 |
Техническая документация
Документация
pdf, 67 КБ