NSS40300DDG
970 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
710 ֏
от 10 шт. —
600 ֏
от 40 шт. —
520 ֏
2 шт.
на сумму 1 940 ֏
Описание
Электроэлемент
Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Bulk (Alt: NSS40300DDR2G)
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | -40 V |
| Collector- Emitter Voltage VCEO Max | -40 V |
| Collector-Emitter Saturation Voltage | 0.135 V |
| Configuration | Dual |
| Continuous Collector Current | -3 A |
| DC Collector/Base Gain hfe Min | 250 |
| DC Current Gain hFE Max | 250 at 10 mA at 2 V |
| Emitter- Base Voltage VEBO | -7 V |
| Factory Pack Quantity | 2500 |
| Gain Bandwidth Product fT | 100 MHz |
| Height | 1.5 mm |
| Length | 5 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | -6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 Narrow |
| Packaging | Reel |
| Pd - Power Dissipation | 783 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | NSS40300DD |
| Transistor Polarity | PNP |
| Unit Weight | 0.005044 oz |
| Width | 4 mm |
| Вес, г | 0.2425 |