SGP5N60RUFD
3 960 ֏
от 2 шт. —
3 390 ֏
от 5 шт. —
3 040 ֏
от 10 шт. —
2 850 ֏
1 шт.
на сумму 3 960 ֏
Описание
Электроэлемент
Insulated Gate Bipolar Transistor, 8A, 600V, N-Channel, TO-220AB
Технические параметры
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Breakdown Voltage | 600 V |
| Collector-Emitter Saturation Voltage | 2.2 V |
| Configuration | Single |
| Continuous Collector Current Ic Max | 8 A |
| Gate-Emitter Leakage Current | +/-100 nA |
| Manufacturer | Fairchild Semiconductor |
| Maximum Gate Emitter Voltage | 20 V |
| Package / Case | TO-220 |
| Packaging | Tube |
| Power Dissipation | 60 W |
| Product Category | IGBT Transistors |
| Вес, г | 2.8 |