BC857BDW1G
427 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
185 ֏
от 10 шт. —
110 ֏
от 100 шт. —
44 ֏
2 шт.
на сумму 854 ֏
Описание
Электроэлемент
BIPOLAR TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-363; No. of Pins:6Pins; Operating Temperature Max:150В°C; Product Range:BCxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):220V; Current Ic Continuous a Max:-100mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:475; Operating Temperature Min:-55В°C; Operating Temperature Range:-55В°C to +150В°C; Termination Type:Surface Mount Device; Transistor Type:General Purpose
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | -50 V |
| Collector- Emitter Voltage VCEO Max | -45 V |
| Collector-Emitter Saturation Voltage | -0.65 V |
| Configuration | Dual |
| Continuous Collector Current | -0.1 A |
| DC Collector/Base Gain hfe Min | 220 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 100 MHz |
| Height | 0.9 mm |
| Length | 2 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 380 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | BC857BDW1 |
| Transistor Polarity | PNP |
| Unit Weight | 0.000988 oz |
| Width | 1.25 mm |
| Вес, г | 0.0304 |
Техническая документация
Документация
pdf, 154 КБ