NSS40301MZ4G
750 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
484 ֏
от 10 шт. —
383 ֏
от 96 шт. —
295 ֏
2 шт.
на сумму 1 500 ֏
Описание
Электроэлемент
100nA 40V 2W 200@1A,1V 3A 215MHz 200mV@3A,300mA NPN -55°C~+150°C@(Tj) SOT-223-4 BIpolar TransIstors - BJT ROHS
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 40 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Configuration | Single |
| DC Collector/Base Gain hfe Min | 220 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 1000 |
| Gain Bandwidth Product fT | 215 MHz |
| Height | 1.57 mm |
| Length | 6.5 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Packaging | Reel |
| Pd - Power Dissipation | 2000 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | NSS40301 |
| Transistor Polarity | NPN |
| Unit Weight | 0.006632 oz |
| Width | 3.5 mm |
| Вес, г | 0.1914 |
Техническая документация
Документация
pdf, 157 КБ