NTD18N06LG
1 240 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
970 ֏
от 10 шт. —
860 ֏
2 шт.
на сумму 2 480 ֏
Описание
Электроэлемент
MOSFET, N CHANNEL, 60V, 18A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.8V
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 38 ns |
| Forward Transconductance - Min | 13.5 S |
| Height | 2.38 mm |
| Id - Continuous Drain Current | 18 A |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 55 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 54 mOhms |
| Rise Time | 79 ns |
| RoHS | Details |
| Series | NTD18N06L |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 9.9 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 15 V |
| Width | 6.22 mm |
| Вес, г | 0.91 |
Техническая документация
Datasheet NTD18N06LT4G
pdf, 86 КБ