NTR1P02G
530 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
291 ֏
от 10 шт. —
212 ֏
от 100 шт. —
139 ֏
2 шт.
на сумму 1 060 ֏
Описание
Электроэлемент
MOSFET, P CH, -20V, 1A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.148ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V;
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 1(A) |
| Drain-Source On-Res | 0.18(ohm) |
| Drain-Source On-Volt | 20(V) |
| Gate-Source Voltage (Max) | '±20(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | SOT-23 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Polarity | P |
| Power Dissipation | 0.4(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 0.0343 |
Техническая документация
Документация
pdf, 184 КБ