FGB20N6S2D
1 980 ֏
от 2 шт. —
1 540 ֏
от 5 шт. —
1 230 ֏
от 10 шт. —
1 110 ֏
1 шт.
на сумму 1 980 ֏
Описание
Электроэлемент
TO-263AB, COMP, N-CH, 600V SMPS II IGBT W/STEALTH DIODE - Bulk (Alt: FGB20N6S2D)
Технические параметры
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Breakdown Voltage | 600 V |
| Collector-Emitter Saturation Voltage | 2.2 V |
| Configuration | Single |
| Continuous Collector Current Ic Max | 28 A |
| Gate-Emitter Leakage Current | +/-250 nA |
| Manufacturer | Fairchild Semiconductor |
| Maximum Gate Emitter Voltage | 20 V |
| Package / Case | TO-263AB |
| Packaging | Tube |
| Power Dissipation | 125 W |
| Product Category | IGBT Transistors |
| Вес, г | 2.766 |