FQU7N20
2 250 ֏
от 2 шт. —
1 810 ֏
от 5 шт. —
1 450 ֏
от 10 шт. —
1 330 ֏
1 шт.
на сумму 2 250 ֏
Описание
Электроэлемент
5.3A, 200V, 0.69ohm, N-Channel Power MOSFET, TO-251
Технические параметры
| Configuration | Single |
| Continuous Drain Current | 5.3 A |
| Drain-Source Breakdown Voltage | 200 V |
| Forward Transconductance gFS (Max / Min) | 3.6 S |
| Gate-Source Breakdown Voltage | +/-30 V |
| Manufacturer | Fairchild Semiconductor |
| Maximum Operating Temperature | 150 C |
| Minimum Operating Temperature | -55 C |
| Package / Case | IPAK |
| Packaging | Tube |
| Power Dissipation | 2500 mW |
| Product | General Purpose MOSFETs |
| Product Category | MOSFETs |
| Resistance Drain-Source RDS (on) | 0.69 Ohm @ 10 V |
| Transistor Polarity | N-Channel |
| Type | MOSFET |
| Typical Fall Time | 35 ns |
| Typical Rise Time | 65 ns |
| Typical Turn-Off Delay Time | 15 ns |
| Вес, г | 0.85 |