SGU20N40L
4 230 ֏
от 2 шт. —
3 660 ֏
от 5 шт. —
3 300 ֏
от 10 шт. —
3 100 ֏
1 шт.
на сумму 4 230 ֏
Описание
Электроэлемент
Insulated Gate Bipolar Transistor, 400V, N-Channel, TO-251
Технические параметры
| Collector- Emitter Voltage VCEO Max | 400 V |
| Collector-Emitter Breakdown Voltage | 450 V |
| Collector-Emitter Saturation Voltage | 4.5 V |
| Configuration | Single |
| Continuous Collector Current Ic Max | 150 A |
| Gate-Emitter Leakage Current | +/-0.1 uA |
| Manufacturer | Fairchild Semiconductor |
| Maximum Gate Emitter Voltage | 6 V |
| Package / Case | IPAK |
| Packaging | Tube |
| Power Dissipation | 45 W |
| Product Category | IGBT Transistors |
| Вес, г | 1.16 |