MJD350G

710 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт.484 ֏
от 10 шт.357 ֏
от 100 шт.286 ֏
2 шт. на сумму 1 420 ֏
Номенклатурный номер: 8002985292

Описание

Электроэлемент
TRANS, BIPOL, PNP,-300V, TO252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:10MHz; Power Dissipation Pd:15W; DC Collector Current:-500mA; DC Current Gain hFE:30hFE; Transistor Case Style:TO-252; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:MJxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

Технические параметры

Brand ON Semiconductor
Collector- Base Voltage VCBO 300 V
Collector- Emitter Voltage VCEO Max 300 V
Collector-Emitter Saturation Voltage 1 V
Configuration Single
Continuous Collector Current 0.5 A
DC Collector/Base Gain hfe Min 30
Emitter- Base Voltage VEBO 3 V
Factory Pack Quantity 2500
Height 1.5 mm
Length 6.73 mm
Manufacturer ON Semiconductor
Maximum DC Collector Current 0.5 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -65 C
Mounting Style SMD/SMT
Package / Case TO-252-3
Packaging Reel
Pd - Power Dissipation 15 W
Product Category Bipolar Transistors-BJT
RoHS Details
Series MJD350
Transistor Polarity PNP
Width 6.22 mm
Вес, г 0.38

Техническая документация

Datasheet
pdf, 87 КБ