MUN5311DW1G
432 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
207 ֏
от 10 шт. —
132 ֏
от 100 шт. —
70 ֏
2 шт.
на сумму 864 ֏
Описание
Электроэлемент
TRANSISTOR, RF, NPN/PNP, 50V, SOT-363-6; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-363; No. of Pins:6 Pin; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); No. of Pins:6Pins
Технические параметры
| Brand | ON Semiconductor |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Dual |
| Continuous Collector Current | 0.1 A |
| DC Collector/Base Gain hfe Min | 35 at 5 mA at 10 V |
| DC Current Gain hFE Max | 35 at 5 mA at 10 V |
| Factory Pack Quantity | 3000 |
| Height | 0.9 mm |
| Length | 2 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SC-88-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 187 mW |
| Peak DC Collector Current | 100 mA |
| Product Category | Bipolar Transistors-Pre-Biased |
| RoHS | Details |
| Series | MUN5311DW1 |
| Transistor Polarity | NPN, PNP |
| Typical Input Resistor | 10 kOhms |
| Typical Resistor Ratio | 1 |
| Width | 1.25 mm |
| Вес, г | 0.0316 |
Техническая документация
Документация
pdf, 250 КБ