NTA4153NG
427 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
185 ֏
от 10 шт. —
115 ֏
от 100 шт. —
60 ֏
2 шт.
на сумму 854 ֏
Описание
Электроэлемент
MOSFET, N CH, 20V, 915MA, SC-75-3; Transistor Polarity:N Channel; Continuous Drain Current Id:915mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.127ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:760m
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 4.4 ns |
| Forward Transconductance - Min | 1.4 S |
| Height | 0.75 mm |
| Id - Continuous Drain Current | 915 mA |
| Length | 1.6 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SC-75-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 300 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 500 mOhms |
| Rise Time | 4.4 ns |
| RoHS | Details |
| Series | NTA4153N |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 25 ns |
| Typical Turn-On Delay Time | 3.7 ns |
| Unit Weight | 0.088185 oz |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 6 V |
| Width | 0.8 mm |
| Вес, г | 0.027 |
Техническая документация
Datasheet
pdf, 72 КБ