NTJD4152PG
530 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
300 ֏
от 10 шт. —
220 ֏
от 100 шт. —
147 ֏
2 шт.
на сумму 1 060 ֏
Описание
Электроэлемент
MOSFET, DUAL P-CH, -20V, -0.88A, SOT-363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-880mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.215ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold V
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Factory Pack Quantity | 3000 |
| Fall Time | 6.5 ns |
| Forward Transconductance - Min | 3 S |
| Height | 0.9 mm |
| Id - Continuous Drain Current | -880 mA |
| Length | 2 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SOT-363-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 272 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 600 mOhms |
| Rise Time | 6.5 ns |
| RoHS | Details |
| Series | NTJD4152P |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 2 P-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 13.5 ns |
| Typical Turn-On Delay Time | 5.8 ns |
| Unit Weight | 0.000265 oz |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vgs - Gate-Source Voltage | 12 V |
| Width | 1.25 mm |
| Вес, г | 0.59 |
Техническая документация
Документация
pdf, 104 КБ