NTR4101PG
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
484 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
260 ֏
от 10 шт. —
185 ֏
от 100 шт. —
132 ֏
2 шт.
на сумму 968 ֏
Описание
Электроэлемент
MOSFET, P, 20V, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-720mV; Power D
Технические параметры
Channel Mode | Enhancement |
Continuous Drain Current | 3.2(A) |
Drain Current (Max) | 2.4 A |
Drain Efficiency | Not Required% |
Drain-Source On-Res | 0.085(ohm) |
Drain-Source On-Volt | 20(V) |
Frequency (Max) | Not Required MHz |
Gate-Source Voltage (Max) | '±8(V) |
Mounting | Surface Mount |
Noise Figure | Not Required dB |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Output Power (Max) | Not Required W |
Package Type | SOT-23 |
Packaging | Tape and Reel |
Pin Count | 3 |
Polarity | P |
Power Dissipation | 1.25(W) |
Power Gain | Not Required dB |
Rad Hardened | No |
Type | Power MOSFET |
Вес, г | 0.0329 |
Техническая документация
Документация
pdf, 212 КБ