BS170G
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
620 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
304 ֏
от 10 шт. —
212 ֏
от 100 шт. —
125 ֏
2 шт.
на сумму 1 240 ֏
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Описание
Электроэлемент
BS170-D74Z BS170"D26Z BS170_D26Z BS170-D26Z
Технические параметры
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 1000 |
Forward Transconductance - Min | 0.32 S |
Height | 5.33 mm |
Id - Continuous Drain Current | 500 mA |
Length | 5.2 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-92-3 |
Packaging | Bulk |
Part # Aliases | BS170_NL |
Pd - Power Dissipation | 830 mW |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 1.2 Ohms |
RoHS | Details |
Series | BS170 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | FET |
Unit Weight | 0.007055 oz |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 20 V |
Width | 4.19 mm |
Вес, г | 0.23 |
Техническая документация
Документация
pdf, 903 КБ