NTF5P03G
1 190 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
930 ֏
от 10 шт. —
810 ֏
от 100 шт. —
710 ֏
2 шт.
на сумму 2 380 ֏
Описание
Электроэлемент
MOSFET, P, 30V, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-1.75V; Power Dissi
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 5.2(A) |
| Drain Current (Max) | 5.2 A |
| Drain Efficiency | Not Required% |
| Drain-Source On-Res | 0.1(ohm) |
| Drain-Source On-Volt | 30(V) |
| Frequency (Max) | Not Required MHz |
| Gate-Source Voltage (Max) | '±20(V) |
| Mounting | Surface Mount |
| Noise Figure | Not Required dB |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Output Power (Max) | Not Required W |
| Package Type | SOT-223 |
| Packaging | Tape and Reel |
| Pin Count | 3+Tab |
| Polarity | P |
| Power Dissipation | 3.13(W) |
| Power Gain | Not Required dB |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 0.17 |
Техническая документация
Документация
pdf, 128 КБ