FDC796N
1 980 ֏
от 2 шт. —
1 590 ֏
от 5 шт. —
1 290 ֏
от 10 шт. —
1 180 ֏
1 шт.
на сумму 1 980 ֏
Описание
Электроэлемент
12.5 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
Технические параметры
| Configuration | Single Quint Source |
| Continuous Drain Current | 12.5 A |
| Drain-Source Breakdown Voltage | 30 V |
| Forward Transconductance gFS (Max / Min) | 48.4 S |
| Gate-Source Breakdown Voltage | +/-20 V |
| Manufacturer | Fairchild Semiconductor |
| Maximum Operating Temperature | 150 C |
| Minimum Operating Temperature | -55 C |
| Package / Case | SSOT |
| Packaging | Reel |
| Power Dissipation | 2000 mW |
| Product | General Purpose MOSFETs |
| Product Category | MOSFETs |
| Resistance Drain-Source RDS (on) | 0.009 Ohm @ 10 V |
| Transistor Polarity | N-Channel |
| Type | MOSFET |
| Typical Fall Time | 13 ns |
| Typical Rise Time | 3.8 ns |
| Typical Turn-Off Delay Time | 26 ns |
| Вес, г | 0.33 |