MJE200S
800 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
530 ֏
от 10 шт. —
396 ֏
от 60 шт. —
311 ֏
2 шт.
на сумму 1 600 ֏
Описание
Электроэлемент
Bipolar (BJT) Single Transistor, NPN, 25 V, 5 A, 15 W, TO-126, Through Hole
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Base Voltage VCBO | 40 V |
| Collector- Emitter Voltage VCEO Max | 25 V |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Configuration | Single |
| Continuous Collector Current | 5 A |
| DC Collector/Base Gain hfe Min | 45 |
| DC Current Gain hFE Max | 180 |
| Emitter- Base Voltage VEBO | 8 V |
| Factory Pack Quantity | 60 |
| Gain Bandwidth Product fT | 65 MHz |
| Height | 11 mm |
| Length | 8 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | Through Hole |
| Package / Case | TO-126-3 |
| Packaging | Tube |
| Part # Aliases | MJE200STU_NL |
| Pd - Power Dissipation | 15 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJE200 |
| Transistor Polarity | NPN |
| Unit Weight | 0.026843 oz |
| Width | 3.25 mm |
| Вес, г | 1.33 |