FQU11P06
2 200 ֏
от 2 шт. —
1 720 ֏
от 5 шт. —
1 380 ֏
от 10 шт. —
1 260 ֏
1 шт.
на сумму 2 200 ֏
Описание
Электроэлемент
MOSFET, P CH,-60V,-9.4A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:38W; Transistor Case Style:TO-251AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; External Depth:16.1mm; External Length / Height:2.3mm; External Width:6.6mm; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:37.6A; Rise Time:40ns; SMD Marking:FQU11P06; Turn Off Time:45ns; Turn On Time:40ns; Voltage Vds Typ:-60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 9.4(A) |
| Drain-Source On-Volt | 60(V) |
| Gate-Source Voltage (Max) | '±30(V) |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | IPAK |
| Packaging | Rail/Tube |
| Pin Count | 3+Tab |
| Polarity | P |
| Power Dissipation | 2.5(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 0.66 |
Техническая документация
Документация
pdf, 1344 КБ