MJB42CG
1 720 ֏
от 2 шт. —
1 280 ֏
от 5 шт. —
990 ֏
от 41 шт. —
920 ֏
1 шт.
на сумму 1 720 ֏
Описание
Электроэлемент
POWER TRANSISTOR, PNP, -100V D2-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:-6A; DC Current Gain hFE:15hFE; Transis
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Continuous Collector Current | 6 A |
| DC Collector/Base Gain hfe Min | 30 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 800 |
| Gain Bandwidth Product fT | 3 MHz |
| Height | 4.83 mm(Max) |
| Length | 10.29 mm(Max) |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 65 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJB42C |
| Transistor Polarity | PNP |
| Width | 9.65 mm(Max) |
| Вес, г | 6.969 |
Техническая документация
Документация
pdf, 195 КБ