FGAF40N60UF
Описание
Электроэлемент
IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3PF; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:100W; Transistor Type:IGBT
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 3 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 40 A |
| Continuous Collector Current Ic Max | 40 A |
| Factory Pack Quantity | 30 |
| Gate-Emitter Leakage Current | 100 nA |
| Height | 16.7 mm |
| Length | 15.7 mm |
| Manufacturer | ON Semiconductor |
| Maximum Gate Emitter Voltage | +/-20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-3PF-3 |
| Packaging | Tube |
| Part # Aliases | FGAF40N60UFTU_NL |
| Pd - Power Dissipation | 100 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | FGAF40N60UF |
| Technology | Si |
| Unit Weight | 0.245577 oz |
| Width | 5.7 mm |
| Вес, г | 8 |