FQU10N20C
5 400 ֏
от 2 шт. —
4 710 ֏
от 5 шт. —
4 290 ֏
от 10 шт. —
4 090 ֏
1 шт.
на сумму 5 400 ֏
Описание
Электроэлемент
Power Field-Effect Transistor, 7.8A, 200V, 0.36ohm, N-Channel, MOSFET
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 7.8(A) |
| Drain-Source On-Volt | 200(V) |
| Gate-Source Voltage (Max) | '±30(V) |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | IPAK |
| Packaging | Rail/Tube |
| Pin Count | 3+Tab |
| Polarity | N |
| Power Dissipation | 50(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 0.68 |
Техническая документация
Datasheet FQU10N20CTU
pdf, 654 КБ