NVR4003NG
530 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
264 ֏
от 10 шт. —
185 ֏
от 100 шт. —
115 ֏
2 шт.
на сумму 1 060 ֏
Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 30V, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:560mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs:1.4V; Po
Технические параметры
| Brand | ON Semiconductor |
| Configuration | Single |
| Factory Pack Quantity | 10000 |
| Fall Time | 64.2 ns |
| Id - Continuous Drain Current | 500 mA |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 0.83 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 1.15 nC |
| Rds On - Drain-Source Resistance | 1.5 Ohms |
| Rise Time | 47.9 ns |
| RoHS | Details |
| Series | NTR4003N |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 65.1 ns |
| Typical Turn-On Delay Time | 16.7 ns |
| Unit Weight | 0.050717 oz |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.4 V |
| Вес, г | 0.036 |
Техническая документация
Документация
pdf, 183 КБ