NTF2955G
1 720 ֏
от 2 шт. —
1 320 ֏
от 5 шт. —
1 210 ֏
от 10 шт. —
1 100 ֏
1 шт.
на сумму 1 720 ֏
Описание
Электроэлемент
MOSFET, P, 60V, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:1W; Transistor Case Style:SOT-223; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:Lead (27-Jun-2018); Current Id Max:2.6mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Surface Mount Device; Voltage Vds Typ:-60V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single Dual Drain |
| Factory Pack Quantity | 1000 |
| Fall Time | 38 ns |
| Forward Transconductance - Min | 1.77 S |
| Height | 1.57 mm |
| Id - Continuous Drain Current | -2.6 A |
| Length | 6.5 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-223-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 2.3 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 145 mOhms |
| Rise Time | 7.6 ns |
| RoHS | Details |
| Series | NTF2955 |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 65 ns |
| Typical Turn-On Delay Time | 11 ns |
| Unit Weight | 0.008826 oz |
| Vds - Drain-Source Breakdown Voltage | -60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 3.5 mm |
| Вес, г | 0.22 |
Техническая документация
Документация
pdf, 125 КБ