FGA4060ADF
4 580 ֏
от 5 шт. —
4 230 ֏
от 10 шт. —
4 000 ֏
от 24 шт. —
3 830 ֏
1 шт.
на сумму 4 580 ֏
Описание
Электроэлемент
Биполярные транзисторы с изолированным затвором (IGBT) 650V FS Gen3 Trench IGBT proliferation
Технические параметры
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 120A |
| Gate Charge | 55.5nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Manufacturer | ON Semiconductor |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-3P-3, SC-65-3 |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 238W |
| Reverse Recovery Time (trr) | 26ns |
| Series | - |
| Supplier Device Package | TO-3PN |
| Switching Energy | 1.37mJ(on), 250ВµJ(off) |
| Td (on/off) @ 25В°C | 16.8ns/54.4ns |
| Test Condition | 400V, 40A, 6 Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Вес, г | 7.21 |
Техническая документация
Документация
pdf, 515 КБ