MMBT3904LG
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
405 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
176 ֏
от 10 шт. —
93 ֏
от 100 шт. —
36 ֏
2 шт.
на сумму 810 ֏
Описание
Электроэлемент
TRANSISTOR, NPN, 40V, 200MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; T
Технические параметры
Brand | ON Semiconductor/Fairchild |
Collector- Base Voltage VCBO | 60 V |
Collector- Emitter Voltage VCEO Max | 40 V |
Collector-Emitter Saturation Voltage | 0.3 V |
Configuration | Single |
Continuous Collector Current | 0.2 A |
DC Current Gain hFE Max | 300 |
Emitter- Base Voltage VEBO | 6 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product fT | 300 MHz |
Height | 0.93 mm |
Length | 2.92 mm |
Manufacturer | ON Semiconductor |
Maximum DC Collector Current | 0.2 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 |
Packaging | Reel |
Part # Aliases | MMBT3904_NL |
Pd - Power Dissipation | 350 mW |
Product Category | Bipolar Transistors-BJT |
RoHS | Details |
Series | MMBT3904 |
Transistor Polarity | NPN |
Unit Weight | 0.001058 oz |
Width | 1.3 mm |
Вес, г | 0.0364 |
Техническая документация
Datasheet
pdf, 137 КБ