MMBT5550LG
414 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
176 ֏
от 10 шт. —
102 ֏
от 100 шт. —
34 ֏
2 шт.
на сумму 828 ֏
Описание
Электроэлемент
BIPOLAR TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:250hFE; Transistor Case Style:S
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 180 V |
| Collector- Emitter Voltage VCEO Max | 140 V |
| Collector-Emitter Saturation Voltage | 0.15 V |
| Configuration | Single |
| Continuous Collector Current | 600 mA |
| DC Collector/Base Gain hfe Min | 60 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 3000 |
| Height | 0.94 mm |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 600 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 225 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MMBT5550L |
| Transistor Polarity | NPN |
| Unit Weight | 0.050717 oz |
| Width | 1.3 mm |
| Вес, г | 4.54 |
Техническая документация
Datasheet
pdf, 177 КБ