MMBT6428LG
427 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
194 ֏
от 10 шт. —
137 ֏
от 100 шт. —
66 ֏
2 шт.
на сумму 854 ֏
Описание
Электроэлемент
TRANSISTOR, NPN, 50V, 0.2A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:700MHz; Power Dissipation Pd:225mW; DC Collector Current:200mA; DC Current Gain hFE:250hFE; Tra
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 40 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector-Emitter Saturation Voltage | 0.6 V |
| Configuration | Single |
| Continuous Collector Current | 0.2 A |
| DC Collector/Base Gain hfe Min | 250 |
| DC Current Gain hFE Max | 650 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 700 MHz |
| Height | 0.94 mm |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 225 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MMBT6428L |
| Transistor Polarity | NPN |
| Unit Weight | 0.000282 oz |
| Width | 1.3 mm |
| Вес, г | 0.1507 |
Техническая документация
Datasheet MMBT6428LT1G
pdf, 82 КБ