MMBTA06LG

414 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт.176 ֏
от 10 шт.102 ֏
от 100 шт.35 ֏
2 шт. на сумму 828 ֏
Номенклатурный номер: 8003332753

Описание

Электроэлемент
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150В°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Gain Bandwidth ft Min:100MHz; Hfe Min:100; No. of Transistors:1; Operating Temperature Min:-55В°C; Operating Temperature Range:-55В°C to +150В°C; Power Dissipation Ptot Max:225mW; SMD Marking:1GM; Tape Width:8mm; Voltage Vcbo:80V

Технические параметры

Brand ON Semiconductor
Collector- Base Voltage VCBO 80 V
Collector- Emitter Voltage VCEO Max 80 V
Collector-Emitter Saturation Voltage 0.25 V
Configuration Single
Continuous Collector Current 0.5 A
Emitter- Base Voltage VEBO 4 V
Factory Pack Quantity 10000
Gain Bandwidth Product fT 100 MHz
Height 0.94 mm
Length 2.9 mm
Manufacturer ON Semiconductor
Maximum DC Collector Current 0.5 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-23-3
Packaging Reel
Pd - Power Dissipation 225 mW
Product Category Bipolar Transistors-BJT
RoHS Details
Series MMBTA06L
Transistor Polarity NPN
Unit Weight 0.050717 oz
Width 1.3 mm
Вес, г 0.03

Техническая документация

MMBTA05L, MMBTA06L
pdf, 98 КБ