MMBTA56LG
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
414 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
176 ֏
от 10 шт. —
102 ֏
от 100 шт. —
35 ֏
2 шт.
на сумму 828 ֏
Описание
Электроэлемент
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150В°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Device Marking:MMBTA56; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; No. of Transistors:1; Operating Temperature Min:-55В°C; Operating Temperature Range:-55В°C to +150В°C; Power Dissipation Ptot Max:225mW; SMD Marking:2GM; Tape Width:8mm; Voltage Vcbo:80V
Технические параметры
Category | Bipolar Small Signal |
Collector Current (DC) | 0.5(A) |
Collector-Base Voltage | 80(V) |
Collector-Emitter Voltage | 80(V) |
Configuration | Single |
DC Current Gain | 100 |
Emitter-Base Voltage | 4(V) |
Frequency | 50(MHz) |
Mounting | Surface Mount |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Output Power | Not Required(W) |
Package Type | SOT-23 |
Packaging | Tape and Reel |
Pin Count | 3 |
Power Dissipation | 0.3(W) |
Rad Hardened | No |
Transistor Polarity | PNP |
Вес, г | 0.0324 |
Техническая документация
Datasheet MMBTA56LT1G
pdf, 148 КБ