BSS63LG
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
440 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
203 ֏
от 10 шт. —
128 ֏
от 100 шт. —
57 ֏
2 шт.
на сумму 880 ֏
Описание
Электроэлемент
TRANSISTOR, PNP, -100V, -100MA, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:95MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150В°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55В°C
Технические параметры
Brand | ON Semiconductor/Fairchild |
Collector- Base Voltage VCBO | 110 V |
Collector- Emitter Voltage VCEO Max | 100 V |
Collector-Emitter Saturation Voltage | 0.25 V |
Configuration | Single |
Continuous Collector Current | 0.2 A |
DC Collector/Base Gain hfe Min | 30 |
Emitter- Base Voltage VEBO | 6 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product fT | 50 MHz |
Height | 0.93 mm |
Length | 2.92 mm |
Manufacturer | ON Semiconductor |
Maximum DC Collector Current | 0.2 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 |
Packaging | Reel |
Part # Aliases | BSS63_NL |
Pd - Power Dissipation | 350 mW |
Product Category | Bipolar Transistors-BJT |
RoHS | Details |
Series | BSS63 |
Transistor Polarity | PNP |
Width | 1.3 mm |
Вес, г | 0.0337 |
Техническая документация
Datasheet BSS63LT1G
pdf, 60 КБ
Datasheet BSS63LT1G
pdf, 81 КБ