BSS63LG

440 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт.203 ֏
от 10 шт.128 ֏
от 100 шт.57 ֏
2 шт. на сумму 880 ֏
Номенклатурный номер: 8003332904

Описание

Электроэлемент
TRANSISTOR, PNP, -100V, -100MA, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:95MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150В°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55В°C

Технические параметры

Brand ON Semiconductor/Fairchild
Collector- Base Voltage VCBO 110 V
Collector- Emitter Voltage VCEO Max 100 V
Collector-Emitter Saturation Voltage 0.25 V
Configuration Single
Continuous Collector Current 0.2 A
DC Collector/Base Gain hfe Min 30
Emitter- Base Voltage VEBO 6 V
Factory Pack Quantity 3000
Gain Bandwidth Product fT 50 MHz
Height 0.93 mm
Length 2.92 mm
Manufacturer ON Semiconductor
Maximum DC Collector Current 0.2 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-23-3
Packaging Reel
Part # Aliases BSS63_NL
Pd - Power Dissipation 350 mW
Product Category Bipolar Transistors-BJT
RoHS Details
Series BSS63
Transistor Polarity PNP
Width 1.3 mm
Вес, г 0.0337

Техническая документация

Datasheet BSS63LT1G
pdf, 60 КБ
Datasheet BSS63LT1G
pdf, 81 КБ