FDS8984, MOSFET 2N-Channel VDS=30V ID=7A RDSon=23m SOIC8_150MIL
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см. техническую документацию
см. техническую документацию
580 ֏
Мин. кол-во для заказа 2 шт.
2 шт.
на сумму 1 160 ֏
Описание
Полевые МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 9 ns |
| Id - Continuous Drain Current: | 7 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 1.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 13 nC |
| Rds On - Drain-Source Resistance: | 19 mOhms |
| Rise Time: | 9 ns |
| Series: | FDS8984 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 42 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 7 A |
| Maximum Drain Source Resistance | 23 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.6 W |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 9.2 nC @ 10 V |
| Width | 4mm |