DMP21D0UT-7, MOSFET P-CH 20V 590MA SOT523

Фото 1/2 DMP21D0UT-7, MOSFET P-CH 20V 590MA SOT523
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см. техническую документацию
80 ֏
Мин. кол-во для заказа 20 шт.
Кратность заказа 10 шт.
от 100 шт.62 ֏
от 500 шт.49 ֏
от 3000 шт.42 ֏
20 шт. на сумму 1 600 ֏
Номенклатурный номер: 8003379636
Бренд: DIODES INC.

Описание

P-канал 20 В 590 мА (Ta) 240 мВт (Ta) поверхностный монтаж SOT-523

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.21.00.95
Product Category Power MOSFET
Configuration Single
Channel Mode Enhancement
Channel Type P
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 20
Maximum Gate Source Voltage (V) ±8
Maximum Gate Threshold Voltage (V) 0.7(Typ)
Maximum Continuous Drain Current (A) 0.65
Maximum Gate Source Leakage Current (nA) 10000
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 495@4.5V
Typical Gate Charge @ Vgs (nC) 1@4.5V|1.5@8V
Typical Input Capacitance @ Vds (pF) 76.5@10V
Maximum Power Dissipation (mW) 330
Typical Fall Time (ns) 18.5
Typical Rise Time (ns) 8
Typical Turn-Off Delay Time (ns) 31.7
Typical Turn-On Delay Time (ns) 7.1
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive Yes
AEC Qualified Number AEC-Q101
Pin Count 3
Supplier Package SOT-523
Standard Package Name SOT
Military No
Mounting Surface Mount
Package Height 0.75
Package Length 1.6
Package Width 0.8
PCB changed 3
Lead Shape Gull-wing
Base Product Number DMP21 ->
Current - Continuous Drain (Id) @ 25В°C 590mA (Ta)
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
ECCN EAR99
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 1.54nC @ 8V
HTSUS 8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C (TJ)
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case SOT-523
Power Dissipation (Max) 240mW (Ta)
Rds On (Max) @ Id, Vgs 495mOhm @ 400mA, 4.5V
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Supplier Device Package SOT-523
Technology MOSFET (Metal Oxide)
Vgs (Max) В±8V
Vgs(th) (Max) @ Id 700mV @ 250ВµA
Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 18.5 ns
Forward Transconductance - Min: 50 mS
Id - Continuous Drain Current: 590 mA
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: SOT-523-3
Pd - Power Dissipation: 240 mW
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 1.5 nC
Rds On - Drain-Source Resistance: 495 mOhms
Rise Time: 8 ns
Series: DMP21
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 31.7 ns
Typical Turn-On Delay Time: 7.1 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs - Gate-Source Voltage: -8 V, +8 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
Continuous Drain Current (Id) 590mA
Drain Source On Resistance (RDS(on)@Vgs,Id) 495mΩ@4.5V, 400mA
Drain Source Voltage (Vdss) 20V
Gate Threshold Voltage (Vgs(th)@Id) 700mV@250uA
Input Capacitance (Ciss@Vds) 80pF@10V
Power Dissipation (Pd) 240mW
Total Gate Charge (Qg@Vgs) 1.54nC@8V
Type P Channel
Вес, г 0.01

Техническая документация

Datasheet DMP21D0UT-7
pdf, 164 КБ
Datasheet DMP21D0UT-7
pdf, 160 КБ