FDS6675BZ, P 30 V 11ATa 2.5WTa 8-SOIC
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
401 ֏
Мин. кол-во для заказа 3 шт.
от 10 шт. —
370 ֏
3 шт.
на сумму 1 203 ֏
Описание
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 11 A |
| Maximum Drain Source Resistance | 13 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2.5 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOIC |
| Pin Count | 8 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V |
| Width | 4mm |
| Case | SO8 |
| Drain current | -11A |
| Drain-source voltage | -30V |
| Gate charge | 35nC |
| Gate-source voltage | ±25V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 21.8mΩ |
| Polarisation | unipolar |
| Power dissipation | 2.5W |
| Technology | PowerTrench® |
| Type of transistor | P-MOSFET |