BSN20-7, MOSFET N-CH 50V 500MA SOT23
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71 ֏
Мин. кол-во для заказа 20 шт.
Кратность заказа 10 шт.
от 100 шт. —
58 ֏
от 500 шт. —
53 ֏
от 3000 шт. —
47 ֏
20 шт.
на сумму 1 420 ֏
Описание
Описание Транзистор: N-MOSFET, полевой, 50В, 0,3А, 0,6Вт, SOT23 Характеристики
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 0.5 |
Maximum Drain Source Resistance (mOhm) | 1800@10V |
Maximum Drain Source Voltage (V) | 50 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 600 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Small Signal |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Supplier Temperature Grade | Automotive |
Typical Fall Time (ns) | 7.01 |
Typical Gate Charge @ 10V (nC) | 0.8 |
Typical Gate Charge @ Vgs (nC) | 0.8@10V |
Typical Input Capacitance @ Vds (pF) | 21.8@10V |
Typical Rise Time (ns) | 2.99 |
Typical Turn-Off Delay Time (ns) | 9.45 |
Typical Turn-On Delay Time (ns) | 2.93 |
Maximum Continuous Drain Current | 500 mA |
Maximum Drain Source Resistance | 2 Ω |
Maximum Drain Source Voltage | 50 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 1.5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 920 mW |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | SOT-23 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 0.8 nC @ 10 V |
Width | 1.4mm |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 8.3 ns |
Id - Continuous Drain Current: | 500 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 920 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 800 pC |
Rds On - Drain-Source Resistance: | 1.8 Ohms |
Rise Time: | 2.99 ns |
Series: | BSN20 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 9.45 ns |
Typical Turn-On Delay Time: | 2.93 ns |
Vds - Drain-Source Breakdown Voltage: | 50 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Lead Finish | Matte Tin |
Max Processing Temp | 260 |
Operating Temperature | -55 to 150 °C |
RDS-on | 1800@10V mOhm |
Typical Fall Time | 7.01 ns |
Typical Rise Time | 2.99 ns |
Typical Turn-Off Delay Time | 9.45 ns |
Typical Turn-On Delay Time | 2.93 ns |
Техническая документация
Datasheet
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Datasheet BSN20-7
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Datasheet BSN20Q-7
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