DMN3067LW-7, MOSFET N-CH 30V 2.6A SOT-323
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см. техническую документацию
см. техническую документацию
124 ֏
Кратность заказа 10 шт.
от 100 шт. —
97 ֏
от 500 шт. —
75 ֏
от 3000 шт. —
68 ֏
10 шт.
на сумму 1 240 ֏
Описание
Описание Транзистор: N-MOSFET, полевой, 30В, 2,1А, Idm: 10А, 0,5Вт, SOT323 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 2.6 A |
| Maximum Drain Source Resistance | 98 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.1 W |
| Minimum Gate Threshold Voltage | 0.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-323 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 4.6 nC @ 4.5 V |
| Width | 1.35mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 6.1 ns |
| Id - Continuous Drain Current: | 2.6 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-323-3 |
| Pd - Power Dissipation: | 1.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 4.6 nC |
| Rds On - Drain-Source Resistance: | 67 mOhms |
| Rise Time: | 5.2 ns |
| Series: | DMN3067 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 3.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |